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| BSP149 SIPMOS(R) Small-Signal-Transistor Features * N-channel * Depletion mode * dv /dt rated Product Summary V DS R DS(on),max I DSS,min 200 3.5 0.14 V A SOT-223 Type BSP149 Package SOT-223 Ordering Code Q67000-S071 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP149 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current I D,pulse T A=25 C I D=0.66 A, V DS=160 V, di /dt =200 A/s, T j,max=150 C Value 0.66 0.53 2.6 Unit A Reverse diode dv /dt dv /dt 6 kV/s Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS 20 Class 1 V P tot T j, T stg T A=25 C 1.8 -55 ... 150 55/150/56 W C Rev. 1.0 page 1 2003-04-03 BSP149 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) SMD version, device on PCB R thJS R thJA minimal footprint 6 cm2 cooling area1) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=-3 V, I D=250 A V GS(th) I D (off) V DS=3 V, I D=400 A V DS=200 V, V GS=-3 V, T j=25 C V DS=200 V, V GS=-3 V, T j=125 C Gate-source leakage current Saturated drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=10 V V GS=0 V, I D=70 mA V GS=10 V, I D=660 mA |V DS|>2|I D|R DS(on)max, I D=0.48 A 200 -2.1 -1.4 -1 0.1 A V 25 115 70 K/W Values typ. max. Unit 140 - 1.7 1.0 5 10 3.5 1.8 nA mA Transconductance g fs 0.4 0.8 - S Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 1) Rev. 1.0 page 2 2003-04-03 BSP149 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=-3 V, I F=0.66 A, T j=25 C V R=100 V, I F=0.5 A, di F/dt =100 A/s 0.9 42 60 0.66 2.6 1.2 65 90 V ns nC A Q gs Q gd Qg V plateau V DD=160 V, I D=0.05 A, V GS=-3 to 5 V 0.74 5.6 11 0.16 1.0 8.4 14 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=100 V, V GS=-2...7 V, I D=0.50 A, R G=6 V GS=-3 V, V DS=25 V, f =1 MHz 326 41 17 5.1 3.4 45 21 430 55 25 7.7 5.1 68 31 ns pF Values typ. max. Unit Rev. 1.0 page 3 2003-04-03 BSP149 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 2 0.7 0.6 1.5 0.5 P tot [W] 0.4 1 I D [A] 0.3 0.5 0.2 0.1 0 0 40 80 120 160 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operation area I D=f(V DS); T A=25 C; D =0 parameter: t p 10 limited by on-state resistance 10 s 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 100 100 s 0.5 1 1 ms 0.2 10 0.1 Z thJA [K/W] 10 ms I D [A] 0.05 0.02 0.01 0.1 DC 1 single pulse 0.01 0.001 1 10 100 1000 0.1 10-4 0 10-3 0 10 -2 0 -1 100 10 0 1 10 1 10 10 2 100 V DS [V] t p [s] Rev. 1.0 page 4 2003-04-03 BSP149 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 1 10 V 1V 0.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 6 -0.2 V 0V 0.1 V 0.2 V 0.5 V -0.1 V 0.8 4 0.2 V 0.1 V 0V -0.1 V -0.2 V 0.4 R DS(on) [] 2 1V 10 V 0.6 I D [A] 0.2 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 C 2 1.2 1.6 1 0.8 1.2 g fs [S] 0.8 0.4 0 -2 -1 0 1 2 3 I D [A] 0.6 0.4 0.2 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V GS [V] I D [A] Rev. 1.0 page 5 2003-04-03 BSP149 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.07 A; V GS=0 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=3 V; I D=400 A parameter: I D 8 0 -0.5 6 -1 98 % R DS(on) [] V GS(th) [V] 4 98 % -1.5 typ -2 2 typ 2% -2.5 0 -60 -20 20 60 100 140 180 -3 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. Capacitances C =f(V DS); V GS=-3 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 1000 10 150 C 25 C 1 Ciss 150 C, 98 % 0.1 C [pF] 100 Coss I F [A] 0.01 Crss 0.001 10 0 5 10 15 20 25 30 0.0001 0 0.5 1 1.5 V DS [V] V SD [V] Rev. 1.0 page 6 2003-04-03 BSP149 14 Typ. gate charge V GS=f(Q gate); I D=0.5 A pulsed parameter: V DD 5 0.5 VDS(max) 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 240 4 3 2 220 0.2 VDS(max) 0.8 VDS(max) V GS [V] 1 0 -1 -2 -3 -4 0 2 4 6 8 10 12 V BR(DSS) [V] 200 180 160 -60 -20 20 60 100 140 180 Q gate [nC] T j [C] Rev. 1.0 page 7 2003-04-03 BSP149 Package Outline: Footprint: Packaging: Rev. 1.0 page 8 2003-04-03 BSP149 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2003-04-03 |
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